high resolution optical reflective sensor technical data hbcs-1100 features ? focused emitter and detector in a single package ? high resolutionC0.190 mm spot size ? 700 nm visible emitter ? lens filtered to reject ambient light ? to-5 miniature sealed package ? photodiode and transistor output ? solid state reliability description the hbcs-1100 is a fully inte- grated module designed for optical reflective sensing. the module contains a 0.178 mm (0.007 in.) diameter 700 nm visible led emitter and a matched i.c. photodetector. a bifurcated aspheric lens is used to image the active areas of the emitter and the detector to a single spot 4.27 mm (0.168 in.) in front of the package. the reflected signal can be sensed directly from the photodiode or through an internal transistor that can be configured as a high gain amplifier. applications applications include pattern recognition and verification, object sizing, optical limit switching, tachometry, textile thread counting and defect detection, dimensional monitor- ing, line locating, mark, and bar code scanning, and paper edge detection. mechanical considerations the hbcs-1100 is packaged in a high profile 8 pin to-5 metal can with a glass window. the emitter and photodetector chips are mounted on the header at the base of the package. positioned above these active elements is a bifurcated aspheric acrylic lens that focuses them to the same point. package dimensions c l 4.11
(0.162) 5.08
(0.200) reference
plane maximum
signal point 4.27 ?0.25
(0.168 ?0.010) 5.08
(0.200) 9.40 (0.370)
8.51 (0.335) 0.86 (0.034)
0.73 (0.029) 1.14 (0.045)
0.73 (0.029) 15.24 (0.600)
12.70 (0.500) 11.50 (0.453)
11.22 (0.442) 8.33 (0.328)
7.79 (0.307) 12.0
(0.473) s.p. r.p. notes:
1. all dimensions in millimeters and (inches).
2. all untoleranced dimensions are for reference only.
3. the reference plane is the top surface of the package.
4. nickel can and gold plated leads.
5. s.p. seating plane.
6. the lead diameter is 0.45 mm (0.018 in.) typ.
2 the sensor can be rigidly secured by commercially available two piece to-5 style heat sinks, such as thermalloy 2205, or aavid engineering 3215. these fixtures provide a stable reference plat- form and their tapped mounting holes allow for ease of affixing this assembly to the circuit board. electrical operation the detector section of the sensor can be connected as a single photodiode or as a photodiode transistor amplifier. when photodiode operation is desired, it is recommended that the substrate diodes be defeated by connecting the collector of the transistor to the positive potential of the power supply and shorting the base-emitter junction of the transistor. figure 15 shows photocurrent being supplied from the anode of the photodiode to an inverting input of the operational amplifier. the circuit is recom- mended to improve the reflected photocurrent to stray photocur- rent ratio by keeping the substrate diodes from acting as photodiodes. the cathode of the 700 nm emitter is physically and electrically connected to the case- substrate of the device. applica- tions that require modulation or switching of the led should be designed to have the cathode connected to the electrical ground of the system. this insures minimum capacitive coupling of the switching transients through the substrate diodes to the detector amplifier section. the hbcs-1100 detector also includes an npn transistor which can be used to increase the output current of the sensor. a current feedback amplifier as shown in figure 6 provides moderate current gain and bias point stability. schematic diagram connection diagram caution: the small junction sizes inherent to the design of this bipolar component increase the component's susceptibility to damage from electrostatic discharge (esd). it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be introduced by esd. 42 68 51 3 7 top view pin function 1
2
3
4
5
6
7
8 transistor collector
transistor base, photodiode anode
photodiode cathode
led cathode, substrate, case
nc
led anode
nc
transistor emitter reference
plane reflector v d v c v f anode 6 substrate, case cathode 4 d s ?substrate diodes 28 v b v e d s d s 31
3 system electrical/optical characteristics at t a = 25 c parameter symbol min. typ. max. units conditions fig. note total photocurrent i p 575 na t a = 20 ci f = 35 ma, 2, 3 4 150 250 375 t a = 25 c 80 t a = 70 c reflected photocurrent i pr 4 8.5 i f = 35 ma, 3 (i pr ) to internal stray i ps v c = v d = 5 v photocurrent (i ps ) transistor dc static h fe 50 t a = 20 cv ce = 5 v, 4, 5 100 200 t a = 25 c slew rate 0.08 v/ m sr l = 100 k, i pk = 50 ma, 6 r f = 10 m, t on = 100 m s, rate = 1 khz image diameter d 0.17 mm i f = 35 ma, 8, 10 8, 9 = 4.27 mm (0.168 in.) maximum signal point 4.01 4.27 4.52 mm measured from reference 9 plane 50% modulation mtf 2.5 i npr/mm i f = 35 ma, 10, 5, 7 transfer function =4.27 mm 11 depth of focus d 1.2 mm 50% of i p at = 4.27 mm 9 5 fwhm effective numerical n.a. 0.3 aperture image location d 0.51 mm diameter reference to 6 centerline = 4.27 mm thermal resistance q jc 85 c/w absolute maximum ratings at t a = 25 c parameter symbol min. max. units fig. notes storage temperature t s -40 +75 c operating temperature t a -20 +70 c lead soldering temperature 260 for 10 sec. c11 1.6 mm from seating plane average led forward current i f 50 ma 2 peak led forward current i fpk 75 ma 1 1 reverse led input voltage v r 5v package power dissipation p p 120 mw 3 collector output current i o 8ma supply and output voltage v d , v c , v e -0.5 20 v 10 transistor base current i b 5ma transistor emitter base voltage v eb 0.5 v (i pr + i ps ) v d = v c = 5 v i c = 10 m a current transfer ratio 15
4 transistor electrical characteristics at t a = 25 c parameter symbol min. typ. max. units conditions fig. note collector-emitter leakage i ceo 1nav ce = 5 v base-emitter voltage v be 0.6 v i c = 10 m a, i b = 70 na collector-emitter saturation v ce (sat) 0.4 v i b = 1 m a, i e = 10 m a voltage collector-base capacitance c cb 0.3 pf f = 1 mhz, v cb = 5 v base-emitter capacitance c be 0.4 pf f = 1 mhz, v be = 0 v thermal resistance q jc 200 c/w notes: 1. 300 m s pulse width, 1 khz pulse rate. 2. derate maximum average current linearly from 65 c by 6 ma/ c. 3. without heat sinking from t a = 65 c, derate maximum average power linearly by 12 mw/ c. 4. measured from a reflector coated with a 99% reflective white paint (kodak 6080) positioned 4.27 mm (0.168 in.) from the reference plane. 5. peak-to-peak response to black and white bar patterns. 6. center of maximum signal point image lies within a circle of diameter d relative to the center line of the package. a second emitter image (through the detector lens) is also visible. this image does not affect normal operation. 7. this measurement is made with the lens cusp parallel to the black-white transition. 8. image size is defined as the distance for the 10%-90% response as the sensor moves over an abrupt black-white edge. 9. (+) indicates an increase in the distance from the reflector to the reference plane. 10. all voltages referenced to pin 4. 11. caution: the thermal constraints of the acrylic lens will not permit the use of conventional wave soldering procedures. the typical preheat and post cleaning temperatures and dwell times can subject the lens to thermal stresses beyond the absolute maximum ratings and can cause it to defocus. detector electrical/optical characteristics at t a = 25 c parameter symbol min. typ. max. units conditions fig. note dark current i pd 5 200 pa t a = 25 ci f = 0, v d = 5 v; 10 na t a = 70 c capacitance c d 45 pf v d = 0 v, i p = 0, f = 1 mhz flux responsivity r f 0.22 a/w l = 700 nm, v d = 5 v 12 detector area a d 0.160 mm 2 square, with length = 0.4 mm/side reflection = 0% emitter electrical/optical characteristics at t a = 25 c parameter symbol min. typ. max. units conditions fig. note forward voltage v f 1.6 1.8 v i f = 35 ma 13 reverse breakdown voltage bv r 5vi r = 100 m a radiant flux f e 5 9.0 m wi f = 35 ma, 14 l = 700 nm peak wavelength l p 680 700 720 nm i f = 35 ma 14 thermal resistance q jc 150 c/w temperature coefficient of v f d v f / d t -1.2 mv/ ci f = 35 ma
5 figure 1. maximum tolerable peak current vs. pulse duration. figure 3. i p test circuit. figure 2. relative total photocurrent vs. led dc forward current. ratio of maximum operating peak
current to temperature derated
maximum dc current 2.0 t p ?pulse duration (?) 1.4 10 1.0 1 10,000 1.2 100 1000 1.6 1.8 i fpk (max.) i f (max.) 10 khz 3 khz 1 khz 300 hz 100 hz 30 khz photocurrent, i pr or i ps
(normalized at i f = 35 ma, t a = 25 ?) 1.6 i f ?dc forward current (ma) 0.8 30 0 080 1.2 0.4 10 40 60 20 50 70 0.2 0.6 1.0 1.4 -20 ? 0 ? 25 ? 50 ? 70 ? reference
plane reflector +5 v v f anode 6 substrate, case cathode 4 notes:
1. i p measurement conditions are: = 4.34 mm,
kodak 6080 paint reflector.
2. i ps measurement conditions are: =
a cavity whose depth is much greater than
the hbcs-1100 depth of field. 28 i p d s d s 31 i f = 35 ma hp 6177 + i p = i pr + i ps + nanoampere meter
(keithley model 480)
6 figure 4. normalized transistor dc forward current gain vs. base current at temperature. figure 5. common emitter collector characteristics. figure 6. slew rate measurement circuit. figure 7. image location. h fe ?dc forward current gain
(normalized at i b = 100 na, t a = 25 ?) 3.0 i b ?base current (na) 1.0 100 0 1000 10 10,000 2.0 v ce = 5 v 70 ? 25 ? -20 ? i c ?collector current (?) 50 v ce ?collector-to-emitter voltage (v) 20 6 0 12 020 40 160 na 30 10 24 10 816 14 18 i b ?base current (na)
temp = 25 ? 140 na 120 na 100 na 80 na 60 na 40 na 20 na reference
plane reflector v f anode 6 substrate, case cathode 4 28 d s d s 31 v cc = 5 v v o 10 m r f 100 k r l hp 8007 47 w i fpk = 50 ma t p = 100 ?,
rate = 1 khz emitter detector detector image
through emitter
lens emitter image
through detector
lens maximum
signal point
7 figure 8. image size vs. distance from sensor. figure 9. reflector distance vs. percent reflected photocurrent. figure 13. led forward current vs. forward voltage characteristics. figure 15. photodiode interconnection. figure 14. relative radiant flux vs. wavelength. figure 10. step edge response. figure 11. modulation transfer function. figure 12. detector spectral response. d ?system response ?mm 1.0 distance from sensor ?mm 0.4 3.5 0 2.5 5.5 0.8 0.2 3.0 4.0 4.5 5.0 non-preferred 0.6 preferred percent msp signal 110 distance from reference plane
of sensor ?mm 40 3.5 0 2.5 5.5 100 20 3.0 4.0 4.5 5.0 70 90 80 60 50 30 10 d % ?reflected photocurrent 110 d d ?edge distance (mm) 50 -0.1 0 -0.3 0.3 80 10 -0.2 0 0.1 0.2 d 20 30 40 60 70 90 100 90 % 10 % % amplitude modulation (p-p) 110 spatial frequency (line pair/mm) 50 2 0 06 80 10 1345 20 30 40 60 70 90 100 % response 110 l ?wavelength (nm) 50 700 0 1000 80 10 600 800 900 20 30 40 60 70 90 100 25 ? 70 ? i f ?input current (ma) 100 v f ?forward voltage (v) 1 1.4 0.01 1.7 10 1.3 1.5 1.6 0.1 i f v f - + reference
plane reflector v f anode 6 substrate, case cathode 4 28 d s d s 31 i p + v cc v out r 2 r 1 r f v cc v out = 1 + r 2 /r 1 ?i p r f relative radiant flux 1.2 l ?wavelength (nm) 1.0 680 0 640 760 0.2 660 700 720 740 0.4 0.6 0.8 0 ? 70 ? 25 ?
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies inc. obsoletes 5965-5944e 5966-1623e (11/99)
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